Sensing field effect transistor devices, systems in which they are incorporated, and methods of their fabrication

ABSTRACT

Embodiments of sensing devices include one or more integrated circuit (IC) die, a housing, and a fluid barrier material. Each IC die includes an electrode-bearing surface and a contact surface. One of the die includes an SFET with a sensing electrode proximate to the electrode-bearing surface. The same or a different die includes a reference electrode proximate to the electrode-bearing surface. The die(s) also include IC contacts at the contact surface(s), and conductive structures coupled between the SFET, the reference electrode, and the IC contacts. The housing includes a mounting surface, and housing contacts formed at the mounting surface. The IC contacts are coupled to the housing contacts. The fluid barrier material is positioned between the mounting surface and the IC die. The fluid barrier material provides a fluid barrier between the IC and housing contacts and a space that encompasses the sensing electrode and the reference electrode.

TECHNICAL FIELD

Embodiments of the subject matter described herein relate generally tosemiconductor devices, and more particularly relate to sensing fieldeffect transistors (SFETs) and systems in which they are incorporated.

BACKGROUND

Field effect transistors (FETs) can be used in sensors configured todetect and analyze chemical substances and biological agents withinfluids. Typically, these sensors rely on the voltage developed betweenthe gate and a reference electrode. More particularly, changes in thegate bias result in a change in the channel current flowing through thedevice. In some designs, a fluid being sensed is in intimate contactwith the gate dielectric. In other designs, the fluid being sensed isseparated from the gate dielectric by a sensitive membrane or coating(e.g., a layer or coating applied to the gate dielectric). For example,depending on the application and the type of sensitive membrane orcoating overlying the gate dielectric, these devices may be termedion-sensitive field effect transistors (ISFETS), immunological fieldeffect transistors (IMFETS) or enzyme field effect transistors (ENFETS).

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete understanding of the subject matter may be derived byreferring to the detailed description and claims when considered inconjunction with the following figures, wherein like reference numbersrefer to similar elements throughout the figures.

FIG. 1 is schematic diagram of a sensing field effect transistor (SFET)device coupled with a measurement system, in accordance with an exampleembodiment;

FIG. 2 is a cross-sectional, side view of an SFET device, in accordancewith an example embodiment;

FIG. 3 is a cross-sectional, side view of an SFET device, in accordancewith another example embodiment;

FIG. 4 is a cross-sectional, side view of an SFET device, in accordancewith yet another example embodiment;

FIG. 5 is a flowchart of a method for fabricating an SFET device, inaccordance with an example embodiment; and

FIG. 6 is a flowchart of a method for using an SFET device to perform ameasurement of a chemical substance or biological agent within a fluid.

DETAILED DESCRIPTION

Embodiments of the inventive subject matter include sensing devices(referred to below as SFET devices), methods of their manufacture, andsystems within which such sensing devices are incorporated. The sensingdevice embodiments described herein each include at least one fieldeffect transistor (FET) and a reference electrode. In some embodiments,the sensing device also may include a reference FET (REFET), whichenables the sensing device to perform differential sensing. The sensingelectrodes of one or both FETs may be coated or covered with a sensitivematerial on which a charge can be induced that varies when the sensitivematerial is exposed to a chemical substance or biological agent to whichit is sensitive. The change in the charge of the sensitive material, inturn, affects the charge on the sensing electrode and the gate. Forexample, various embodiments include sensing devices that include one ormore ion-sensitive field effect transistors (ISFETS), immunologicalfield effect transistors (IMFETS), enzyme field effect transistors(ENFETS), or other types of FETs that are affected by chemicalsubstances and/or biological agents in a fluid that contacts the sensingelectrodes or sensitive materials of the FETs. These devices may begenerically referred to herein as sensing FETs (SFETs). As will be madeclearer from the following description, chip-scale implementation of thecomponents of an SFET device, along with specialized packaging and theuse of appropriate fluid barrier materials enables highly-reliable SFETdevices to be easily and inexpensively mass produced.

A device that includes an SFET (e.g., a single FET or an FET/REFETcombination) and its associated reference electrode may be incorporatedinto a system that is configured to detect and process the electricalsignals produced by the SFET(s) and the reference electrode.Accordingly, such systems may produce measurement data indicating thepresence of or representing the concentration of a chemical substance orbiological agent in a fluid that is applied to the device.

For example, FIG. 1 is schematic diagram of a system 100 that includesan SFET device 102 coupled with a measurement system 160, in accordancewith an example embodiment. SFET device 102 includes two SFETs 110, 130that provide differential signals that are further analyzed by othercomponents of the system 100. More specifically, in an embodiment, SFETdevice 102 has a FET/REFET configuration, in that the SFET device 102includes a first SFET 110 and a reference SFET 130 (REFET). According toan embodiment, the REFET and its corresponding REFET electrode 118 maybe configured to be less sensitive to the chemical substances and/orbiological agents than are the first SFET 110 and its correspondingsensing electrode 116.

The first SFET 110 has a gate, source, and drain, where the gate iselectrically coupled to a sensing electrode 116 (e.g., either directlyor through a gate contact), and the source and drain are coupled tosource and drain contacts 112, 114, respectively. The sensing electrode116 may directly contact a fluid 192 being tested, or a sensitivematerial (not shown in FIG. 1) may overlay the sensing electrode 116.Either way, exposure to the fluid 192 may induce charge in the sensitivematerial and the sensing electrode, which in turn affects the charge onthe gate of SFET 110 and the current flowing through a channelunderlying the gate.

Similarly, the REFET (or SFET 130) has a gate, source, and drain, wherethe gate is electrically coupled to a REFET electrode 118 (e.g., eitherdirectly or through a gate contact), and the source and drain arecoupled to source and drain contacts 120, 122, respectively. Again, theREFET electrode 118 may directly contact the fluid 192 being tested, ora sensitive material (not shown in FIG. 1) may overlay the REFETelectrode 118. Either way, exposure to the fluid 192 may induce chargein the sensitive material and the sensing electrode, which in turnaffects the charge on the gate of SFET 130 and the current flowingthrough a channel underlying the gate. In yet another embodiment, theREFET electrode 118 or the sensitive material covering it (not shown inFIG. 1) may be exposed to a different fluid (e.g., a reference fluid)while sensing electrode 116 or the sensitive material covering it (alsonot shown in FIG. 1) is being exposed to fluid 192.

According to an embodiment, SFETs 110, 130 may have oppositeconductivity types, as illustrated in FIG. 1. For example, SFET 110 maybe an n-channel (or n-type) FET, and SFET 130 may be a p-channel (orp-type) FET, or vice versa. In an alternate embodiment, SFETs 110, 130may have the same conductivity type (e.g., either both n-type or bothp-type). In such an embodiment, the characteristics of the SFETs 110,130 and or the sensing and REFET electrodes 116, 118 to which they arecoupled may differ to enhance the ability of the SFETs 110, 130 toproduce signals having measurable differences. In still other alternateembodiments, SFET device 102 may include only a single SFET, or mayinclude more than two SFETs.

In addition, the sensing and REFET electrode 116, 118 and SFET 110, 130configurations illustrated in FIG. 1 represent simplified electricalrepresentations of sensing electrode/SFET combinations. In otherembodiments, either or both of the electrodes 116, 118 may becapacitively coupled to the SFETs 110, 130 (e.g., the gates of the SFETs110, 130 may be floating), and/or the SFETs 110, 130 may includeadditional structures that affect operation of the SFETs 110, 130 (e.g.,control structures that may be used to affect the biasing of the gate,protection diodes, and so on). Various configurations of sensingelectrodes and SFETs are intended to be included within the scope of theinventive subject matter.

In the illustrated embodiment of the FET/REFET configuration, andaccording to an embodiment, the source and drain contacts 112, 114, 120,122 of SFETs 110, 130 are coupled to voltage or current measurementdevices 140, 142. Each measurement device 140, 142 includes two inputscoupled across the source and drain contacts 112, 114, 120, 122 of oneof the SFETs 110, 130, and each measurement device 140, 142 isconfigured to measure either the drain-source voltage (Vds) or thedrain-source current (Ids) of the SFET 110, 130 to which it is coupled.Further, each measurement device 140, 142 produces a voltage signal atan output of the device 140, 142, where the voltage signal isrepresentative of the measured Vds or Ids.

According to an embodiment, the outputs of the measurement devices 140,142 are coupled to a non-inverting input and an inverting input of anoperational amplifier 144, which is configured to detect and amplify thedifference between the two voltage signals. According to an embodiment,an analog signal is produced at the output of operational amplifier 144,which represents the difference between the two voltage signals.

Device 102 further includes a microcontroller 146, in an embodiment,which receives the analog signal produced by the operational amplifier144, and which converts the analog signal into a digital signal thatindicates the difference between the two voltage signals produced by theSFETS 110, 130 and measurement devices 140, 142. This digital signal maybe output from the device 102 through a digital interface 148, such as aserial-peripheral interface (SPI), and 12C interface, or the like. Thedigital interface 148, in turn, is coupled (e.g., through contacts 228,428, FIGS. 2, 4) to measurement system 160, the components of andfunctionality of which will be described below. In an alternateembodiment, the analog signal produced by the operational amplifier 144may be output from the device 102 directly.

Device 102 also may include memory 147, which may be configured to storedigital representations of the output of the operational amplifier 144,the voltage signals produced by the SFETs 110, 130, and/or otherinformation. For example, SFET device 102 may be capable of performingits essential measurement operations prior to being connected tomeasurement system 160. After subsequent coupling of the SFET device 102to measurement system 160, the information stored within memory 147 maybe downloaded to measurement system 160.

According to an embodiment, device 102 also includes a referenceelectrode 150, which may be used to provide an electrical bias to thefluid 192 being tested. According to an embodiment, reference electrode150 also is coupled to measurement system 160, and reference electrode150 may receive a bias voltage directly from measurement system 160. Inan alternate embodiment, reference electrode 150 may receive a biasvoltage from microcontroller 146, or from another component of SFETdevice 102.

As will be explained in more detail later, the components of SFET device102 may be packaged together in a common housing, and may be implementedon one or more integrated circuit (IC) die. For example, as illustratedin FIG. 1, electrodes 116, 118, SFETS 110, 130, measurement devices 140,142, operational amplifier 144, microcontroller 146, and interface 148all may be implemented on a first IC die 104, and reference electrode150 may be implemented on a second IC die 106. In an alternateembodiment, all of the components of SFET device 102 may be implementedon a single IC die (e.g., as in the embodiment of FIG. 4). In stillother alternate embodiments, SFETs 110, 130 may be implemented onseparate IC die, and/or either SFET 110, 130 may be implemented on thesame die as reference electrode 150. In still other alternateembodiments, any of measurement devices 140, 142, operational amplifier144, microcontroller 146, and/or interface 148 may be implemented onseparate IC die from SFETs 110, 130.

Although not illustrated, SFET device 102 may include additionalcomponents, including for example, contacts for receiving power andground from an external system (e.g., from measurement system 160), alimited or rechargeable power source (e.g., a battery system), and soon. Alternatively, SFET device 102 may include fewer than all of theillustrated components. For example, some or all of measurement devices140, 142, operational amplifier 144, and/or microcontroller 146 may beexcluded from SFET device 102, and may instead be implemented withinmeasurement system 160.

According to an embodiment, measurement system 160 includes a processingsystem 162, a user interface 166 (e.g., including a display, keypad, andso on), memory 168, and a bias voltage generator 164. Among otherthings, processing system 162 is configured to cause bias voltagegenerator 164 to provide a bias voltage to reference electrode 150.According to various embodiments, the bias voltage may be a directcurrent (DC) voltage or an alternating current (AC) voltage. Thecharacteristics of the bias voltage may be specified by a user throughuser interface 166, and/or may be stored in memory 168, for example.

Further, processing system 162 is configured to receive signals fromSFET device 102 (e.g., through interface 148). As discussed previously,the signals represent the measured differential voltage produced byoperational amplifier 144. Processing system 162 is further configuredto store the measured differential voltages in memory 168 and/or tooutput indications of the measured differential voltages using userinterface 166.

According to an embodiment, SFET device 102 may be coupled to anduncoupled from measurement system 160 by a user. For example, SFETdevice 102 may be packaged in a housing that is configured to snap intoa correspondingly shaped receptacle within measurement system 160.Alternatively, SFET device 102 may be permanently coupled to measurementsystem 160 with hardwired or persistent connections. In still anotherembodiment, SFET device 102 and measurement system 160 may communicateover a Near Field Communication (NFC), radio frequency (RF) or wirelesscommunication link. In such an embodiment, SFET device 102 could includethe capability to function autonomously (e.g., SFET device 102 would beconfigured to provide a bias voltage to reference electrode 150 and toperform the other sensing and processing steps previously described).

As described previously, the essential purpose of SFET device 102 is todetect chemical substances and/or biological agents in a fluid 192 thatis brought into contact with sensing electrode 116, reference electrode150, and, in some embodiments, REFET electrode 118. Of course, thevarious electrical contacts of the IC die and the interfaces with themeasurement system 160 should be protected from the fluid 192 beingtested, in order to avoid short circuits that would compromise thefunctionality of the system 100. According to various embodiments, theIC die 104, 106 of SFET device 102 are implemented with bottom-surfacecontacts (e.g., contacts 228, 246, 428, FIGS. 2, 4) that are protectedduring operation by a fluid barrier material (e.g., fluid barriermaterial 280, 380, 480, FIGS. 2-4).

FIG. 2 is a cross-sectional, side view of an SFET device 200 (e.g., SFETdevice 102, FIG. 1), in accordance with an example embodiment. SFETdevice 200 includes SFET IC 210, reference electrode IC 240, and packagehousing 260. SFET IC 210 and reference electrode IC 240 are electricallyand mechanically coupled to package housing 260, and, more specifically,to a mounting surface 265 of a bottom member 264 of package housing 260.As will be described in more detail below, SFET device 200 furtherincludes fluid barrier material 280 disposed between the mountingsurface 265 and sidewalls of SFET IC 210 and reference electrode IC 240,where the fluid barrier material 280 is configured to protect contacts228, 246, 266 on surfaces of the SFET IC 210, reference electrode IC240, and mounting surface 265 from fluid 292 that is being tested by theSFET device 200.

The SFET IC 210 illustrated in FIG. 2 is a simplified depiction of an ICthat includes a first SFET and a second SFET, referred to below as afirst SFET and a REFET, respectively. For example, the first SFET andthe REFET may correspond, schematically, to SFETS 110, 130 of FIG. 1,respectively. As will be explained in more detail later, SFET IC 210 mayhave a different and/or more complicated configuration than thatdepicted in FIG. 2.

The first SFET and the REFET are formed in and over a semiconductorsubstrate, which may be a silicon substrate, a silicon-on-insulator(SOI) substrate, a gallium nitride substrate, a gallium arsenidesubstrate, a substrate of a different semiconductor material, or acompound substrate (e.g., silicon on sapphire, and so on). According toan embodiment, the SFET IC 210 is a complementary metal oxidesemiconductor (CMOS) IC, which includes active devices of both p-typeand n-type conductivity. For example, the first SFET may be a p-channeldevice, and the REFET may be an n-channel device, or vice versa.Alternatively, the first SFET and the REFET may have the sameconductivity or channel type. In the description below, the first SFETis described as being formed directly in the semiconductor substrate. Incontrast, the REFET is described as being formed in a well 224 thatextends into the semiconductor substrate, where the well 224 has anopposite conductivity type from the semiconductor substrate. Inalternate embodiments, both the first SFET and the REFET (including thewell 224) may be formed in a “tub” within the substrate, where the “tub”is a region of different doping type or concentration from thesemiconductor substrate. These and other modifications are intended tofall within the scope of the inventive subject matter.

According to an embodiment, the portion of the semiconductor substratewithin which the first SFET is formed has a first conductivity type anddoping density. For example, this portion of the semiconductor substratemay have a p-conductivity type and relative doping density. Conversely,the portion of the semiconductor substrate within which the REFET isformed has a second conductivity type. Accordingly, SFET IC 210 furthermay include a well 224 that is doped to have a second conductivity typethat is opposite the first conductivity type. For example, according toan embodiment, the well 224 may have an n conductivity type and relativedoping density.

According to an embodiment, the first SFET includes a first sourceregion 212 and a first drain region 214, each of the second conductivitytype, which are formed at the surface of the semiconductor substrate. Achannel is present between the source and drain regions 212, 214, and agate dielectric 215 overlies the channel. A gate contact (e.g., sensingelectrode 216 or a gate contact electrically coupled to sensingelectrode 216) may overlay the gate dielectric 215. In some cases, thegate dielectric 215 or another dielectric may be in direct contact withthe fluid 292. According to the embodiment illustrated in FIG. 2, thegate contact also functions as a sensing electrode 216. In an alternateembodiment, the gate contact and the sensing electrode 216 may bedistinct features of the first SFET, and may be electrically coupledtogether (e.g., through one or more vias, conductive layers, capacitors,and so on). Either way, the sensing electrode 216 is formed proximate toan “electrode-bearing” surface of the SFET IC 210 (i.e., the topsurface, in the orientation of FIG. 2). As used herein, “proximate to” asurface means co-planar with the surface, slightly above the surface, orslightly below the surface. The top surface of the substrate andstructures proximate to the electrode-bearing surface may beelectrically isolated from each other and/or protected by a protectionor passivation layer 226.

Similarly, the REFET includes a second source region 218 and a seconddrain region 220, each of the first conductivity type, which are formedat the surface of the semiconductor substrate in the second conductivitytype well 224. A channel is present between the source and drain regions218, 220, and a gate dielectric 221 overlies the channel. A gate contact(e.g., REFET electrode 222 or a gate contact electrically coupled toREFET electrode 222) overlies the gate dielectric 221. In an alternateembodiment, the gate contact and the REFET electrode 222 may be distinctfeatures of the first SFET, and may be electrically coupled together(e.g., through one or more vias, conductive layers, capacitors, and soon). Either way, the REFET electrode 222 also is formed proximate to theelectrode-bearing surface of the SFET IC 210.

According to an embodiment, sensitive material 217, 223 overlies both ofthe electrodes 216, 222. As discussed previously, a charge is induced onthe sensitive material 217, 223 that varies when the sensitive material217, 223 is exposed to a chemical substance or biological agent (withinfluid 292) to which it is sensitive. In various embodiments, thesensitive material 217, 223 may be selected from a biological materialsensitive material, a pH sensitive material, a chemical sensitivematerial, and an ion sensitive material. More specifically, thesensitive material 217, 223 may include one or more materials that areselected from silicon nitride, polyvinyl chloride (PVC) compounds (e.g.,PVC-based membranes), an enzyme, an antibody, an antigen, ribonucleicacid (RNA), deoxyribonucleic acid (DNA), DNA-like fragments, epitopes,and cell receptors. Other suitable sensitive materials may be used inother embodiments.

The charges induced in the sensitive material 217, 223, in turn, affectthe charges on the electrodes 216, 222 and the gate contacts. Thecharges on the electrodes 216, 222 and the gate contacts affect thedrain-source voltage, Vds, and/or the amount of current through thechannels of the first FET and the REFET (i.e., the drain-source current,Ids, or more specifically the amount of current flowing between source212 and drain 214, and the amount of current flowing between source 218and drain 220). For example, if Vds is constant, the change in the gatechare causes Ids to change. Conversely, if Ids is constant, the changein the gate charge causes Vds to change. The variable drain-sourcecurrents and/or drain source voltages may be measured and processed(e.g., by measurement devices 140, 142, operational amplifier 144,microcontroller 146, and so on) to produce indications of the presenceof or concentrations of chemical substances and/or biological materialspresent in the fluid 292.

In embodiments in which the sensitive material 217, 223 covers both thesensing electrode 216 and the REFET electrode 222, one of the electrodes216, 222 may be larger than the other to facilitate differentialsensing. This is done by extending the gate of one of the devices whilemaintaining the structure of the underlying FET. This increases thecharge collected and, hence, the gate bias. In an alternate embodiment,differential sensing may be facilitated by excluding the sensitivematerial 217, 223 from either or both of the electrodes 216, 222, or byincluding an insensitive material on the REFET electrode 222. In anotheralternate embodiment, the gate of one of the devices may be extendedwhile maintaining the structure of the underlying FET.

Although some important features of the first SFET and the REFET aredepicted in FIG. 2, it is to be understood that the first SFET and theREFET may have more complicated and/or different configurations in anactual implementation. For example, although the first SFET and theREFET each are depicted as including an electrode 216, 222 directlyoverlying gate dielectric 215, 221, in alternate embodiments, theelectrodes 216, 222 may be formed in an upper metal layer, while aseparate gate contact may be formed in a lower metal layer (i.e., in ametal layer overlying the gate dielectric 215, 221), and the distinctsense and gate contact metal layers may be interconnected withconductive vias and through one or more intervening metal layers.Further, as indicated above in conjunction with the description of FIG.1, the electrodes 216, 222 may be capacitively coupled to theirrespective gate contacts. These and other modifications are intended tofall within the scope of the inventive subject matter.

Further, as also discussed in conjunction with the description of FIG.1, the SFET IC 210 also may include one or more measurement devices(e.g., devices 140, 142), operational amplifiers (e.g., operationalamplifier 144), microcontrollers (e.g., microcontroller 146), interfaces(e.g., interface 148), or other components. Alternatively, some or allof these components may be provided in other ICs that form a portion ofthe SFET device 200, or some or all of these components may beimplemented external to the SFET device 200 (e.g., in a measurementsystem 160).

Either way, the first SFET and the REFET (or more specifically theirsources and drains) are coupled to a plurality of contacts 228 at acontact surface of the SFET IC 210, in an embodiment, where the contactsurface is on an opposite side of the SFET IC 210 from theelectrode-bearing surface. Electrical coupling between the first SFETand the REFET to the plurality of contacts 228 may be direct, or may bemade through one or more other components formed in the SFET IC 210(e.g., through measurement devices 140, 142, operational amplifier 144,microcontroller 146, interface 148, and/or other components). Theelectrical connections to the first SFET and the REFET may include, forexample, conductive routing within one or more metal layers and, in aparticular embodiment, one or more through substrate vias 230 (TSVs),which extend through the substrate to electrically couple componentsproximate to the electrode-bearing surface and the contacts 228proximate to the contact surface. In an alternate embodiment, the FETand REFET may be formed proximate to the contact surface (i.e., thebottom surface of SFET IC 210, in the orientation of FIG. 2. In otherwords, the substrate may be flipped, with respect to the orientationshown in FIG. 2), and TSVs or other electrical structures may be used toelectrically couple the gate contacts of the FET and REFET to a sensingelectrode and a REFET electrode at the electrode-bearing surface (i.e.,the top surface of the SFET IC 210, in the orientation of FIG. 2).

Referring now to reference electrode IC 240, reference electrode IC 240includes a reference electrode (e.g., reference electrode 150, FIG. 1)formed on or above a semiconductor substrate. The top surface of thesubstrate and structures proximate to the electrode-bearing surface maybe electrically isolated from each other and/or protected by aprotection or passivation layer 244. The reference electrode IC alsoincludes one or more contacts 246 at a contact surface of the referenceelectrode IC 240, where the contact surface is on an opposite side ofthe reference electrode IC 240 from the electrode-bearing surface. Thereference electrode 242 is electrically coupled to at least one of theone or more contacts 246 through conductive routing within one or moremetal layers and, in a particular embodiment, one or more TSVs 248,which extend through the substrate to electrically couple componentsproximate to the electrode-bearing surface and the contacts 246proximate to the contact surface.

Referring now to package housing 260, and as mentioned previously,housing 260 includes a bottom member 264 with a mounting surface 265. Inaddition, housing 260 includes a plurality of first contacts 266 formedat the mounting surface 265, a plurality of second contacts 268 formedat an exterior surface 269 of the package housing 260, one or moreconductive routing layers 270 between the mounting and exterior surfaces265, 269, and conductive vias (not numbered) interconnecting thecontacts 266, 268 and conductive layers 270.

According to an embodiment, package housing 260 also may includesidewalls 262 extending from the mounting surface 265. The sidewalls 262and mounting surface 265 define a cavity 290 within which the SFET IC210, the reference electrode IC 240, and a liquid 292 being tested arecontained. According to an embodiment, the height of the sidewalls 262extends above the electrode-bearing surfaces of the SFET IC 210 and thereference electrode IC 240. In alternate embodiments, the height 262 ofthe sidewalls 262 may be at or below the heights of theelectrode-bearing surfaces of the SFET IC 210 and the referenceelectrode IC 240. In still another alternate embodiment, the sidewalls262 may be excluded (e.g., surface tension of the liquid 292 may enablethe liquid 292 to cover the sensing and REFET electrodes 216, 222 andthe reference electrode 242).

Contacts 228, 246 of the SFET IC 210 and the reference electrode IC 240are electrically and physically coupled to sets of correspondingcontacts 266 on the mounting surface 265. For example, the IC contacts228, 246 may be coupled to the housing contacts 266 with solder balls272, 274, conductive epoxy, or by other means. In the case of solderball connections, either or both sets of solder balls 272, 274 may bereflowed to establish the electrical and physical connection.Alternatively, either or both sets of solder balls 272, 274 may bepress-fit to corresponding pins (not shown) associated with contacts 266or 228, 246 to provide the electrical connection, and the SFET IC 210and/or reference electrode IC 240 may be clamped to housing 260 toestablish a robust physical connection.

In any event, according to an embodiment, SFET device 200 also includesa fluid barrier material 280 between the mounting surface 265 and theSFET and reference electrode ICs 210, 240, where the fluid barriermaterial 280 is configured to provide a fluid barrier between contacts228, 246, 266 and a space (e.g., within cavity 290 or otherwiseoverlying the SFET and reference electrode ICs 210, 240) thatencompasses the sensing and REFET electrodes 216, 222 and the referenceelectrode 242. For example, in the illustrated embodiment, the fluidbarrier material 280 is selectively deposited between sidewalls of theSFET and reference electrode ICs 210, 240 and the mounting surface 265,where portions of the mounting surface 265 may remain uncovered.According to an embodiment, the fluid barrier material 280 may beconfigured to maintain cavities 276, 278 between the SFET and referenceelectrode ICs 210, 240 and the mounting surface 265, or the fluidbarrier material 280 may fill these cavities 276, 278, as long as thefluid barrier material 280 is sufficiently electrically insulating. Forexample, fluid barrier material 280 may include silicone (e.g., a roomtemperature vulcanizing silicone), fluorosilicone, perfluorpolyether,epoxy, polyurethane, underfill material, or another material that issuitable for providing a fluid barrier between the contacts 228, 246,266 and the fluid 292.

In the above-described embodiment, both the SFET electrodes 216, 222 andthe reference electrode 242 may be exposed to fluid 292 in the spacethat encompasses the electrodes 216, 222, 242. In an alternateembodiment, the REFET electrode 222 and/or the reference electrode 242instead may be formed proximate the contact surface of the SFET IC 210and/or the reference electrode IC 240, respectively, so that the REFETelectrode 222 and/or the reference electrode 242 is exposed to thecavity 276 or 278 underlying the contact surface. In such an embodiment,cavity 276 and/or 278 may be filled with a non-conductive referencefluid (not illustrated) that has known electrical characteristics. Inthe embodiment in which the REFET electrode 222 is so arranged, theREFET electrode 222 may be electrically coupled with the REFET throughone or more TSVs.

In the embodiment of FIG. 2, the fluid barrier material 280 isconfigured so that portions of the mounting surface 265 remain exposedto fluid 292 deposited within cavity 290. FIG. 3 is a cross-sectional,side view of an SFET device 300, in accordance with another exampleembodiment. Similar to the previously described SFET device 200, theSFET device 300 illustrated in FIG. 3 includes a package housing 360,and an SFET IC 310 and reference electrode IC 340 coupled to a mountingsurface of the package housing 360. However, in the embodiment of FIG.3, the fluid barrier material 380 deposited within the package housing360 covers an entirety of the mounting surface of the package housing360, and extends up the sidewalls of the SFET and reference electrodeICs 310, 340. For example, fluid barrier material 380 may include one ofthe aforementioned materials, or may include a gel or other suitablyviscous and compliant material. Again, the fluid barrier material 380may be configured to maintain cavities 376, 378 between the SFET andreference electrode ICs 310, 340 and the mounting surface, or the fluidbarrier material 380 may fill these cavities 376, 378, as long as thefluid barrier material 380 is sufficiently electrically insulating.

In the embodiments of FIGS. 2 and 3, the first FET and REFET are formedin one IC die 210, 310, and the reference electrode is formed inanother, distinct IC die 240, 340. An advantage that this configurationprovides is that the IC die 240, 340 that includes the referenceelectrode may be fabricated without accounting for the sensitivematerial (e.g., sensitive material 217, 223) overlying the first FET andREFET electrodes, and the IC die 210, 310 that includes the first FETand the REFET may be fabricated without considering how the referenceelectrode will be fabricated without overlying sensitive material.Further, the IC die 240, 340 that includes the reference electrode maybe electrically and mechanically coupled to the housing 260 using arelatively high temperature process, rather than being constrained tousing a process having a lower temperature that would not potentiallydamage the sensitive material overlying the FET and REFET electrodes.

In an alternate embodiment, however, the first FET, the REFET, and thereference electrode all may be formed in a single die. Such anembodiment may be relatively easy to fabricate, for example, when thesensitive material overlying the FET and REFET electrodes may be easilypatterned and removed (e.g., as is the case for Si3N4 and othermaterials), and/or when masking operations may easily be performed tomask the reference electrode while the sensitive material is depositedon the FET and REFET electrodes. For example, FIG. 4 is across-sectional, side view of an SFET device 400, in accordance with yetanother example embodiment. SFET device 400 includes SFET and referenceelectrode die 410 coupled to a package housing 460. As many of thepreviously described details and alternate embodiments described inconjunction with FIGS. 2 and 3 apply equally to FIG. 4, such details andalternate embodiments are not repeated in conjunction with thedescription of FIG. 4 for the purpose of brevity.

In any event, SFET and reference electrode die 410 includes a firstSFET, a second SFET or REFET, and a reference electrode 442. The firstSFET is formed in and over a substrate of a first conductivity type, andincludes a first source 412, a first drain 414, a channel extendingbetween the source and drain 412, 414, a gate dielectric 415 overlyingthe channel, and a sensing electrode 416 either overlying the gatedielectric 415 or electrically connected to a gate electrode thatoverlies the gate dielectric 415. Similarly, the REFET, which is formedin and over a well 424 with an opposite conductivity type from thesubstrate, includes a second source 418, a second drain 420, a channelextending between the source and drain 418, 420, a gate dielectric 421overlying the channel, and a REFET electrode 422 either overlying thegate dielectric 421 or electrically connected to a gate electrode thatoverlies the gate dielectric 421. The electrodes 416, 422 are positionedproximate to an electrode-bearing surface of the SFET and referenceelectrode IC 410. In addition, in an embodiment, the SFET and referenceelectrode IC 410 includes sensitive material 417, 423 overlying eitheror both of the electrodes 416, 422.

According to the illustrated embodiment, the SFET and referenceelectrode IC 410 also includes a reference electrode 422 proximate tothe electrode-bearing surface of the IC 410. The conductive components(e.g., electrodes 416, 422, 442) proximate to the electrode-bearingsurface are electrically isolated from each other with passivation orprotection layer 426, which also functions to protect the top surface ofthe substrate from the fluid 492 being tested.

The SFET and reference electrode IC 410 also includes a plurality ofcontacts 428 at or proximate to a contact surface of the SFET andreference electrode IC 410. The first SFET, the REFET, and the referenceelectrode 442 are electrically coupled to the contacts 428 throughconductive traces of one or more metal layers and through TSVs, invarious embodiments.

Package housing 460 includes a mounting surface 465 with contacts 466that align with and are coupled to contacts 428 using solder balls 472or other means. Contacts 466 are electrically coupled with additionalcontacts 468 at an exterior surface 469 of housing 460 through one ormore routing layers and/or conductive vias.

As with the previously described embodiments, SFET device 400 alsoincludes fluid barrier material 480 which is configured to provide afluid barrier between contacts 428, 466 and a space that encompasses thesensing and REFET electrodes 416, 422 and the reference electrode 442,so that fluid 492 deposited within that space does not reach and shortout the contacts 428, 466. As with the previously-described embodiments,the fluid barrier material 480 may be configured to maintain a cavity476 between the SFET and reference electrode IC 410 and the mountingsurface 465, or the fluid barrier material 480 may fill this cavity 476,as long as the fluid barrier material 480 is sufficiently electricallyinsulating.

In the embodiments illustrated and discussed in conjunction with FIGS.2-4, the fluid barrier material 280, 380, 480 extends between sidewallsof the SFET and reference electrode ICs 210, 240, 310, 340, 410 and themounting surface of the package housing 260, 360, 460. In an alternateembodiment, the fluid barrier material may take the form of seal ring(s)placed around the contact array(s) and between the contact surface(s) ofthe SFET and reference electrode IC(s) and the mounting surface of thepackage housing.

According to an embodiment, the shape and other characteristics ofpackage housing 260, 360, 460 are configured to enable the sensingdevices 200, 300, 400 to be coupled to or inserted into an externalmeasurement system (e.g., measurement system 160, FIG. 1). For example,the measurement system may include contacts that align with packagecontacts (e.g., contacts 268, FIG. 2) when the SFET device 200, 300, 400is suitably joined with the measurement system. The electricalconnections between the SFET device 200, 300, 400 and the measurementsystem, once established, enable communication between those devices andprovision of reference electrode biasing, as previously discussed.

In each of the above described embodiments, the SFET device 102, 200,300, 400 has a FET/REFET configuration. In alternate embodiments, anSFET device may include only a single SFET. For example, each of theSFET ICs 210, 310, 410 may exclude the REFET altogether. In addition, ineach of the above described embodiments, the SFET and the REFET haveopposite conductivity types. In other alternate embodiments, the REFETmay have the same conductivity type as the SFET, although with differentphysical and electrical characteristics and/or biases to facilitatedifferential sensing.

Embodiments of methods for fabricating and operating SFET devices willnow be described in conjunction with FIGS. 5 and 6. Starting first withfabrication, FIG. 5 is a flowchart of a method for fabricating an SFETdevice (e.g., SFET devices 102, 200, 300, 400), in accordance with anexample embodiment. The method may begin, in blocks 502 and 504, byfabricating an SFET wafer that includes a plurality of SFET IC die, andby separately fabricating a reference electrode wafer that includes aplurality of reference electrode IC die. By fabricating wafers thatspecifically include only reference electrode IC die or SFET IC die,processes that otherwise would be employed to ensure that sensitivematerials are not deposited on the reference electrodes (or to ensurethat deposited sensitive materials are removed from the referenceelectrodes) may be excluded from the fabrication process. In addition,the sensitive materials may be deposited across all SFET IC die prior tosingulation of the SFET IC die from the wafer. Accordingly, in contrastto current practices in which sensitive materials are deposited onsensing and/or REFET electrodes individually after singulation, arelatively inexpensive and efficient spin coating or vapor/solutiondeposition process may be used at the wafer level to deposit thesensitive materials.

In any event, once the wafer-level fabrication of the SFET wafer and thereference electrode wafer are completed, a singulation process (e.g.,wet sawing, laser cutting, or the like) may be performed to separate theindividual SFET IC die and reference electrode IC die. In cases in whichthe sensitive materials may be compromised by conventional singulationtechniques, singulation of the SFET IC die may be performed using astealth dicing or other technique (e.g., focusing a laser beam into theinterior of the semiconductor wafer, creating stresses that cause thedie to separate when a mounting film is expanded). In an alternateembodiment, as discussed in conjunction with FIG. 4, the SFET(s) andreference electrodes may be included within a single die. In such cases,multiple SFET and reference electrode IC die may be included on a singlewafer, and suitable masking and/or material removal processes may beemployed to deposit the sensitive material on the SFET electrodeswithout leaving sensitive material on the reference electrodes.

In block 506, the SFET IC die and the reference electrode IC die (or thecombined SFET and reference electrode IC die) are electrically andmechanically coupled to the mounting surface of a package housing, asdescribed previously. In block 508, fluid barrier material is applied toprovide a fluid barrier between contacts of the SFET and referenceelectrode IC die and the package housing, and a space that encompassesthe sensing, REFET, and reference electrodes. As mentioned previously,one type of fluid barrier that may be employed is a seal ring. In suchan embodiment, the seal ring may be fabricated on the SFET IC die andthe reference electrode IC die at the wafer level (e.g., prior tosingulation). Alternatively, the seal ring(s) may be applied during theprocess of coupling the SFET and reference electrode IC die to themounting surface. Other fabrication processes also may be employed tocomplete the SFET device.

FIG. 6 is a flowchart of a method for using an SFET device (e.g., any ofdevices 102, 200, 300, 400) to perform a measurement of a chemicalsubstance or biological agent within a fluid. According to anembodiment, the SFET devices may be fabricated as distinct devices thatmay be removably or non-permanently coupled with an external measurementsystem (e.g., measurement system 160, FIG. 1). For example, as discussedpreviously, the shape and other characteristics of the package housingare configured to enable the SFET devices to be coupled to or insertedinto the external measurement system. Accordingly, in an embodiment, themethod for using an SFET device may begin, in block 602, by attachingthe package housing of an SFET device to the measurement system. Acalibration, self-test, or test using the measurement system optionallymay be performed at this point.

In block 604, the fluid to be tested is placed on the SFET and referenceelectrode IC die, or more specifically in contact with the sensingelectrode, the REFET electrode, and the reference electrode. Whether ornot performed previously, a calibration, self-test, or test using themeasurement system optionally may be performed at this point. In block606, the measurement system may provide a bias voltage to the referenceelectrode, and the SFET IC die may produce a digital (or analog) valuethat indicates the presence of or concentration of ions or othersubstances within the fluid. In block 608, the SFET device may then beremoved from the measurement system. For example, the SFET device may bea one-use only, disposable device. Alternatively, the SFET device may besuitable for multiple uses. In some cases, the SFET device may besufficiently robust that it may be permanently coupled to themeasurement system.

Various embodiments of SFET devices (or sensing devices), systems inwhich they are incorporated, and methods for their fabrication and usehave been described above. For example, SFET devices may be used tosense the presence of or concentration of a target ion or molecule in asolution. When sensing biological material, a change in charge of asensitive material overlying the sensing electrode occurs when thematerial to be measured bonds to the sensitive material. Examplesinclude antigen-antibody bonding reactions, DNA bonding reactions, and acell receptor bonding to its complement.

As described above, SFET transistors are used in the various embodimentsof SFET devices, but the way they are used depends on the application.For ISFETS, the sensing electrode(s) (and thus the gate(s)) of theFET(s) interact with the electrolyte in which the SFET device isimmersed, and a potential difference is developed between the gate(s)and the reference electrode. The resulting change in channel currentscan be translated by an associated circuit to produce an analog ordigital output that reflects the presence of or concentration of therelevant ions in the electrolyte. For example, the pH of a solution canbe monitored by an SFET device with a sensitive material coating ofsilicon nitride. In addition, sodium (Na), potassium (K), magnesium(Mg), calcium (Ca), lead (Pb), and other chemicals or compounds may bedetected by sensing electrodes made selective by polyvinyl chloride(PVC) based membranes.

In contrast, ENFETs have an enzyme coating. In many applications, theenzyme will interact with the analyte to create products which changethe pH of the solution. This change in pH is detected by the SFET(s). Apair of SFETs may be used, one with the coating, and one without thecoating as a reference. IMFETs use antibodies for coatings. A change incharge occurs when the antibodies interact with their targets. DNAsensors detect DNA strands in a similar fashion. A reference electrodemay be excluded in either case.

An embodiment of a sensing device (or SFET device) includes first andsecond IC die, a housing, and a fluid barrier material. The first IC dieincludes a first electrode-bearing surface, a first contact surface onan opposite side of the first IC die from the first electrode-bearingsurface, an SFET with a sensing electrode proximate to the firstelectrode-bearing surface, a plurality of first contacts at the firstcontact surface, and a plurality of first conductive structures coupledbetween the SFET and the first contacts. The second IC die includes asecond electrode-bearing surface, a second contact surface on anopposite side of the second IC die from the second electrode-bearingsurface, a reference electrode proximate to the second electrode-bearingsurface, one or more second contacts at the second contact surface, andone or more second conductive structures coupled between the referenceelectrode and the one or more second contacts. The housing includes amounting surface, and a plurality of third contacts formed at themounting surface. The plurality of first contacts are coupled to a firstset of the third contacts, and the one or more second contacts arecoupled to a second set of the third contacts. The fluid barriermaterial is between the mounting surface and the first and second ICdies. The fluid barrier material provides a fluid barrier between thefirst, second, and third contacts and a space that encompasses thesensing electrode and the reference electrode.

Another embodiment of a sensing device (or SFET device) includes an ICdie, a housing, and a fluid barrier material. The IC die includes anelectrode-bearing surface, a contact surface on an opposite side of theIC die from the electrode-bearing surface, an SFET with a sensingelectrode proximate to the electrode-bearing surface, a referenceelectrode proximate to the electrode-bearing surface, a plurality offirst contacts at the contact surface, and a plurality of conductivestructures coupled between the SFET, the reference electrode, and thefirst contacts. The housing includes a mounting surface, and a pluralityof second contacts formed at the mounting surface. The plurality offirst contacts are coupled to the second contacts. The fluid barriermaterial is between the mounting surface and the IC die. The fluidbarrier material provides a fluid barrier between the first and secondcontacts and a space that encompasses the sensing electrode and thereference electrode.

An embodiment of a method of forming a sensing device (or SFET device)includes forming one or more IC die that include an SFET with a sensingelectrode, a reference electrode, a plurality of first contacts at oneor more contact surfaces, and a plurality of conductive structurescoupled between the SFET, the reference electrode, and the firstcontacts. The method further includes coupling the plurality of firstcontacts to second contacts at a mounting surface of a housing, andproviding a fluid barrier material between the mounting surface and theone or more IC die. The fluid barrier material provides a fluid barrierbetween the first and second contacts and a space that encompasses thesensing electrode and the reference electrode.

The connecting lines shown in the various figures contained herein areintended to represent exemplary functional relationships and/or physicalcouplings between the various elements. It should be noted that manyalternative or additional functional relationships or physicalconnections may be present in an embodiment of the subject matter. Inaddition, certain terminology may also be used herein for the purpose ofreference only, and thus are not intended to be limiting, and the terms“first”, “second” and other such numerical terms referring to structuresdo not imply a sequence or order unless clearly indicated by thecontext.

The foregoing description refers to elements or nodes or features being“connected” or “coupled” together. As used herein, unless expresslystated otherwise, “connected” means that one element is directly joinedto (or directly communicates with) another element, and not necessarilymechanically Likewise, unless expressly stated otherwise, “coupled”means that one element is directly or indirectly joined to (or directlyor indirectly communicates with, electrically or otherwise) anotherelement, and not necessarily mechanically. Thus, although the schematicshown in the figures depict one exemplary arrangement of elements,additional intervening elements, devices, features, or components may bepresent in an embodiment of the depicted subject matter.

The various embodiments of the invention described here are illustratedby semiconductor devices and structures of particular conductivity typehaving various p and n doped regions appropriate for that conductivitytype device or structure. But this is merely for convenience ofexplanation and not intended to be limiting. Persons of skill in the artwill understand that devices or structures of opposite conductivity typemay be provided by interchanging conductivity types so that a p-typeregion becomes an n-type region and vice versa. Alternatively, theparticular regions illustrated in what follows may be more generallyreferred to as of a “first conductivity type” and a “second oppositeconductivity type,” wherein the first conductivity type may be either nor p type and the second opposite conductivity type is then either p orn type, and so forth. Further, for convenience of explanation and notintended to be limiting, various embodiments of the present inventionare described herein for silicon semiconductors, but persons of skill inthe art will understand the invention is not limited to silicon butapplies to a wide variety of semiconductor materials. Non-limitingexamples are other type IV semiconductor materials, as well as typeIII-V and II-VI semiconductor materials, organic semiconductor materialsand combinations thereof, whether in bulk form or in layered form or inthin film form or semiconductor-on-insulator (SOI) form or combinationsthereof. Such materials may be single-crystal or poly-crystalline oramorphous or combinations thereof.

The preceding detailed description is merely illustrative in nature andis not intended to limit the embodiments of the subject matter or theapplication and uses of such embodiments. As used herein, the word“exemplary” means “serving as an example, instance, or illustration.”Any implementation described herein as exemplary is not necessarily tobe construed as preferred or advantageous over other implementations.Furthermore, there is no intention to be bound by any expressed orimplied theory presented in the preceding technical field, background,or detailed description.

While at least one exemplary embodiment has been presented in theforegoing detailed description, it should be appreciated that a vastnumber of variations exist. It should also be appreciated that theexemplary embodiment or embodiments described herein are not intended tolimit the scope, applicability, or configuration of the claimed subjectmatter in any way. Rather, the foregoing detailed description willprovide those skilled in the art with a convenient road map forimplementing the described embodiment or embodiments. It should beunderstood that various changes can be made in the function andarrangement of elements without departing from the scope defined by theclaims, which includes known equivalents and foreseeable equivalents atthe time of filing this patent application.

What is claimed is:
 1. A sensing device comprising: a first integrated circuit (IC) die that includes a first electrode-bearing surface, a first contact surface on an opposite side of the first IC die from the first electrode-bearing surface, a sensing field effect transistor (SFET) with a sensing electrode proximate to the first electrode-bearing surface, a plurality of first contacts at the first contact surface, and a plurality of first conductive structures coupled between the SFET and the first contacts; a second IC die that includes a second electrode-bearing surface, a second contact surface, a reference electrode proximate to the second electrode-bearing surface, one or more second contacts at the second contact surface, and one or more second conductive structures coupled between the reference electrode and the one or more second contacts; a housing that includes a mounting surface, and a plurality of third contacts formed at the mounting surface, wherein the plurality of first contacts are coupled to a first set of the third contacts, and the one or more second contacts are coupled to a second set of the third contacts; and a fluid barrier material between the mounting surface and the first and second IC die, wherein the fluid barrier material provides a fluid barrier between the first, second, and third contacts and a space that encompasses the sensing electrode.
 2. The sensing device of claim 1, wherein the housing further includes sidewalls extending from the mounting surface, wherein the mounting surface and the sidewalls define a cavity that includes the space that encompasses the sensing and reference electrodes.
 3. The sensing device of claim 1, wherein the fluid barrier material is selected from silicone, fluorosilicone, perfluorpolyether, epoxy, polyurethane, an underfill material, a gel, and seal rings between the first and second contact surfaces and the mounting surface.
 4. The sensing device of claim 1, wherein the first IC die further includes: a substrate having an active surface and a first conductivity type, and wherein the SFET includes a first source formed at the active surface and having a second conductivity type, a first drain formed at the active surface and having the second conductivity type, a first channel at the active surface between the first source and the first drain, and a first dielectric overlying the first channel.
 5. The sensing device of claim 4, further comprising a reference FET (REFET) that includes a well formed in the substrate that extends to the active surface and has the second conductivity type, a second source formed in the well and having the first conductivity type, a second drain formed in the well and having the first conductivity type, a second channel between the second source and the second drain, and a second dielectric overlying the second channel.
 6. The sensing device of claim 5, wherein the first IC die further includes: a first measurement device having first inputs coupled to the first source and the first drain, and a first output that produces a first signal representing a voltage or current between the first source and the first drain; a second measurement device having second inputs coupled to the second source and the second drain, and a second output that produces a second signal representing a voltage or current between the second source and the second drain; and an operational amplifier having third inputs coupled to the first and second outputs, and a third output that produces a third signal representing a difference between the first signal and the second signal.
 7. The sensing device of claim 6, wherein the first IC die further includes: a microcontroller coupled to the third output and configured to convert the third signal into a digital signal.
 8. The sensing device of claim 7, wherein the first IC die further includes: a digital interface coupled between the microcontroller and the plurality of first contacts, and configured to output the digital signal produced by the microcontroller.
 9. The sensing device of claim 1, wherein the SFET further includes a sensitive material deposited on the sensing electrode, wherein the sensitive material is selected from a biological material sensitive material, a pH sensitive material, a chemical sensitive material, and an ion sensitive material.
 10. The sensing device of claim 9, wherein the sensitive material includes one or more materials that are selected from silicon nitride, polyvinyl chloride (PVC) based membranes, an enzyme, an antibody, an antigen, ribonucleic acid (RNA), deoxyribonucleic acid (DNA), DNA-like fragments, epitopes, and cell receptors.
 11. The sensing device of claim 1, wherein the plurality of first and second conductive structures comprise through substrate vias.
 12. A sensing device comprising: an integrated circuit (IC) die that includes an electrode-bearing surface, a contact surface on an opposite side of the IC die from the electrode-bearing surface, a sensing field effect transistor (SFET) with a sensing electrode proximate to the electrode-bearing surface, a reference electrode, a plurality of first contacts at the contact surface, and a plurality of conductive structures coupled between the SFET, the reference electrode, and the first contacts; a housing that includes a mounting surface, and a plurality of second contacts formed at the mounting surface, wherein the plurality of first contacts are coupled to the second contacts; and a fluid barrier material between the mounting surface and the IC die, wherein the fluid barrier material provides a fluid barrier between the first and second contacts and a space that encompasses the sensing electrode.
 13. The sensing device of claim 12, wherein the housing further includes sidewalls extending from the mounting surface, wherein the mounting surface and the sidewalls define a cavity that includes the space that encompasses the sensing and reference electrodes.
 14. The sensing device of claim 12, wherein the fluid barrier material is selected from silicone, fluorosilicone, perfluorpolyether, epoxy, polyurethane, an underfill material, a gel, and a seal ring between the contact surface and the mounting surface.
 15. The sensing device of claim 12, wherein the IC die further comprises a reference FET (REFET).
 16. The sensing device of claim 12, wherein the SFET further includes a sensitive material deposited on the sensing electrode, wherein the sensitive material is selected from a biological material sensitive material, a pH sensitive material, a chemical sensitive material, and an ion sensitive material.
 17. A method of forming a sensing device comprising: forming one or more integrated circuit (IC) die that includes a sensing field effect transistor (SFET) with a sensing electrode, a reference electrode, a plurality of first contacts at one or more contact surfaces, and a plurality of conductive structures coupled between the SFET, the reference electrode, and the first contacts; coupling the plurality of first contacts to second contacts at a mounting surface of a housing; and providing a fluid barrier material between the mounting surface and the one or more IC die, wherein the fluid barrier material provides a fluid barrier between the first and second contacts and a space that encompasses the sensing electrode.
 18. The method of claim 17, wherein the fluid barrier material is selected from silicone, fluorosilicone, perfluorpolyether, epoxy, polyurethane, an underfill material, a gel, and one or more seal rings between the one or more contact surfaces and the mounting surface.
 19. The method of claim 17, wherein the one or more IC die further comprises a reference FET (REFET).
 20. The method of claim 17, further comprising depositing a sensitive material on the sensing electrode, wherein the sensitive material is selected from a biological material sensitive material, a pH sensitive material, a chemical sensitive material, and an ion sensitive material. 